inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1022 description collector-emitter sustaining voltage- : v ceo(sus) = 100v(min) high dc current gain : h fe = 1500(min) @i c = 3a low saturation voltage applications designed for general purpoe amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 7 v i c collector current-continuous 5 a i cp collector current-peak 8 a i b b base current-continuous 0.5 a i bm base current-peak 1 a p c collector power dissipation @ t c =25 30 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 4.17 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1022 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce( sat ) collector-emitter saturation voltage i c = 3a; i b = 3ma b 1.5 v v be( sat ) base-emitter saturation voltage i c = 3a; i b = 3ma b 2.0 v i cbo collector cutoff current v cb = 100v; i e =0 0.1 ma i ceo collector cutoff current v ce = 100v; i b =0 0.1 ma i ebo emitter cutoff current v eb = 7v; i c =0 5 ma h fe dc current gain i c = 3a; v ce = 3v 1500 30000 f t current-gain?bandwidth product i c = 0.5a; v ce = 10v 20 mhz switching times t on turn-on time 2.0 s t stg storage time 5.0 s t f fall time i c = 5a, i b1 = -i b2 = 5ma r l = 5 ; v bb2 = 4v 3.0 s isc website www.iscsemi.cn 2
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